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Proceedings Paper

Practical resist model calibration
Author(s): Pary Baluswamy; Amy Weatherly; Dave Kewley; Peter Brooker; Mike Pauzer
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Paper Abstract

The lack of calibrated resist models has lead to a reliance on aerial images. This has limited capability of simulation to predict printed image shapes and CDs, especially in low K1 regimes. Calibration of resist models for matching simulation to pattern on wafers has always been a challenge due to various reasons. The primary problem is the large number of model parameters that need to be optimized. Another problem is the uncertainty associated with measurement of even the most basic parameters like thickness and refractive index. The amount of time and effort that is needed to calibrate the multitude of parameters is impractical in most situations. Some authors have taken the approach of optimizing a subset of parameters while retaining arbitrary default values for the rest. This leaves one wondering about the need for such models in process optimization and if a simpler empirical model would be sufficient. In this paper the various models are reviewed and the ones needing the smallest set of parameters are selected for calibration using a commercial resist modeling software package. The results of the calibration are checked against actual lithographic performance.

Paper Details

Date Published: 26 June 2003
PDF: 14 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485339
Show Author Affiliations
Pary Baluswamy, Micron Technology, Inc. (United States)
Amy Weatherly, Micron Technology, Inc. (United States)
Dave Kewley, Micron Technology, Inc. (United States)
Peter Brooker, Sigma-C (United States)
Mike Pauzer, Sigma-C (United States)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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