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Proceedings Paper

ACLV-analysis in production and its impact on product performance
Author(s): Rolf Seltmann; Rolf Stephan; Martin Mazur; Christopher Spence; Bruno La Fontaine; Dirk Stankowski; Andre Poock; Wolfram Grundke
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Paper Abstract

The paramount importance of CD-control for logic speed is well recognized. Whereas across wafer-line-width-variation (AWLV) influences the width of the speed distribution, across chip line-width-variation (ACLV) is a dominating factor for device leakage. In our study we will discuss different ACLV-terms based on AMD’s 0.18 and 0.13μm processes. We will show how the variation of different scanner and reticle-parameters affects both random and systematic ACLV-components. We will show that the systematic part either can be dominated by global or layout-specific CD-signature, depending on the reticle manufacturing process, scanner condition and the circuit design. In particular we will discuss the impact of defocus, lens aberrations, illumination uniformity dose accuracy and flare. Eventually, we will show the response of critical performance parameters of state of the art μPs and we will judge different parameters with respect to their impact on μP-speed. Focus control and flare control are found to be the most critical tasks. We will discuss appropriate methods to ensure both focus and flare don’t affect device performance negatively.

Paper Details

Date Published: 26 June 2003
PDF: 11 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485337
Show Author Affiliations
Rolf Seltmann, AMD Saxony LLC & Co. KG (Germany)
Rolf Stephan, AMD Saxony LLC & Co. KG (Germany)
Martin Mazur, AMD Saxony LLC & Co. KG (Germany)
Christopher Spence, AMD Inc. (United States)
Bruno La Fontaine, AMD Inc. (United States)
Dirk Stankowski, AMD Saxony LLC & Co. KG (Germany)
Andre Poock, AMD Saxony LLC & Co. KG (Germany)
Wolfram Grundke, AMD Saxony LLC & Co. KG (Germany)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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