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Proceedings Paper

Theoretical consideration on quantum lithography with conventional projection
Author(s): Toru Fujii; Naoki Fukutake; Hisao Osawa; Hiroshi Ooki
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Paper Abstract

At the end of last century, the name of “quantum lithography” has been emerged. This exciting approach was proposed for making a resolution two times higher than that of the conventional optics without changing a wavelength and a numerical aperture. For those who want optical lithography to last long, this has been thought to be a great technology. However, an applicability of the proposed method to the current exposure system i.e., reduced projection exposure system has not yet been examined clearly. We have investigated the proposed quantum lithography to apply into the current exposure system using reticle. For simplicity, coherent illumination i.e. sigma is zero condition is used for calculation. Our quantum lithography compatible to mask exposure system explains probability of one and two photon absorption on the image plane i.e. on wafer. We have shown that the half-wavelength quantum lithography using conventional mask exposure system is impossible because diffraction at the mask makes biphoton into two photon. We have found that there is still super-resolution quantum lithography using mask exposure, however, there is little possibility of quantum lithography practically today because biphoton light source is as dark as stars. To realize quantum lithography practically, further development of not only biphoton light source but also two-photon absorption resist is indispensable.

Paper Details

Date Published: 26 June 2003
PDF: 7 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485335
Show Author Affiliations
Toru Fujii, Nikon Corp. (Japan)
Naoki Fukutake, Nikon Corp. (Japan)
Hisao Osawa, Nikon Corp. (Japan)
Hiroshi Ooki, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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