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Proceedings Paper

Zero MEF hole formation with Atten-PSM and modified illumination
Author(s): Shuji Nakao; Tadashi Miyagi; Shinji Tarutani; Shigenori Yamashita; Junji Miyazaki; Hidehiko Kozawa; Akira Tokui; Kouichirou Tsujita
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Paper Abstract

Extremely fine hole pattern formation with dark spot image is investigated with Atten-PSM and specific modified illumination. In optical image calculation, by the application of tone reversed image in Atten-PSM under an optimized cross-pole illumination, dark spot image with zero MEF and iso-focal characteristics is obtained for very wide range of pattern pitch. In KrF wavelength, formation of ~110 nm size dark spot image with resolution DOF higher than ~0.50μm can be achieved for the pattern pitch of isolated to ~240 nm. In this imaging, MEF may become very low or exactly zero for the pitch of isolated to ~300 nm. Because of low or zero MEF, OPC is essentially difficult or may be performed imperfectly for this method. However, small OPE of ~10 nm in CD variation throughout pattern pitch could be expected by the application of optimized illumination. In preliminary experiments under KrF optics of NA=0.75, high DOF and zero MEF characteristics are successfully proven, even while the experiments are carried out with non-optimal modified illumination.

Paper Details

Date Published: 26 June 2003
PDF: 12 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485323
Show Author Affiliations
Shuji Nakao, Mitsubishi Electric Corp. (Japan)
Tadashi Miyagi, Mitsubishi Electric Corp. (Japan)
Shinji Tarutani, Mitsubishi Electric Corp. (Japan)
Shigenori Yamashita, Mitsubishi Electric Corp. (Japan)
Junji Miyazaki, Mitsubishi Electric Corp. (Japan)
Hidehiko Kozawa, Mitsubishi Electric Corp. (Japan)
Akira Tokui, Mitsubishi Electric Corp. (Japan)
Kouichirou Tsujita, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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