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Proceedings Paper

Improved outline phase-shifting mask (OL-PSM) for reduction of the mask error enhancement factor
Author(s): Akio Misaka; Takahiro Matsuo; Masaru Sasago
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Paper Abstract

We propose a new resolution enhancement technology (RET) for enhancing the resolution of contact hole patterns. The technology uses an attenuated mask with phase shifting aperture. The phase shifter is laid out based on the OL-PSM and CL-PSM algorithm. These RETs are called “Mask Enhancer”. Aerial images of random hole patterns are strongly enhanced by using the Mask Enhancer. We used the Mask Enhancer in 100-nm hole pattern fabrication in ArF lithography. The process window is strongly improved and the MEEF is drastically reduced compared to att-PSM.

Paper Details

Date Published: 26 June 2003
PDF: 11 pages
Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485319
Show Author Affiliations
Akio Misaka, Matsushita Electric Industrial Co., Ltd. (Japan)
Takahiro Matsuo, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5040:
Optical Microlithography XVI
Anthony Yen, Editor(s)

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