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Proceedings Paper

NBTI improvement for pMOS by Cl-contained 1st oxidation in 20A/65A dual-nitrided gate oxide of 0.13-μm CMOS technology
Author(s): Ching-Chen Hao; Min-Hwa Chi; Chao-Chi Chen; Hung-Jen Lin; Yu-Fang Lin; C. H. Hsieh; Chih-Hsiung Lee; Kuang-Hui Chang; H. T. Wu; Chin-Heng Shen
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Paper Abstract

A new method is demonstrated in this paper for improving the NBTI lifetime on pMOS by >3X for I/O (65A) transistors and >2X for core (20A) transistors by using Chlorine (Cl) contained 1st gate oxidation in an advanced dual gate oxide 0.13um CMOS technology. The improvement appears related to the residual SiCl bonds on the surface of core and I/O transistor areas (from the Cl-contained 1st oxidation). The transistor beta (as measured by Idsat/(Vg-Vt)2 at saturation mode) is improved (~10%) on pMOS and degraded slightly (~3%) on nMOS as an evidence for supporting this mechanism.

Paper Details

Date Published: 10 July 2003
PDF: 8 pages
Proc. SPIE 5042, Design and Process Integration for Microelectronic Manufacturing, (10 July 2003); doi: 10.1117/12.485249
Show Author Affiliations
Ching-Chen Hao, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Min-Hwa Chi, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chao-Chi Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hung-Jen Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yu-Fang Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
C. H. Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chih-Hsiung Lee, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Kuang-Hui Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
H. T. Wu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chin-Heng Shen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5042:
Design and Process Integration for Microelectronic Manufacturing
Alexander Starikov, Editor(s)

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