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Proceedings Paper

Novel materials for 157-nm bilayer resist designs
Author(s): Stephanie J. Dilocker; Sanjay Malik; Binod B. De
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Paper Abstract

Absorbance data on a variety of silicon-containing monomers are reported at 157nm. Choice of appropriate silicon monomers led to a second-generation bilayer resist, which showed improved transparency over the first-generation silicon-derived hydroxystyrene based resist. Increasing the overall silicon content improved its transparency and O2 etch properties. The second-generation bilayer resist demonstrated 80nm resolution for dense line/space pairs. No silicon outgassing or post-exposure film loss was observed upon 157nm exposure.

Paper Details

Date Published: 12 June 2003
PDF: 6 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485207
Show Author Affiliations
Stephanie J. Dilocker, Arch Chemicals, Inc. (United States)
Sanjay Malik, Arch Chemicals, Inc. (United States)
Binod B. De, Arch Chemicals, Inc. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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