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Proceedings Paper

Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer
Author(s): Yoshinori Matsui; Satoshi Umeda; Shiro Matsui; Shu Seki; Seiichi Tagawa; Seiichi Ishikawa; Toshiro Itani
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Paper Abstract

We directly measured mass spectra and change in mass spectral intensity as a function of time for outgassed species from fluoropolymers and fluorine-containing resists during 157 nm exposure using quadrupole mass spectrometer at pressure about 4×10-7 Torr, in order to investigate dependence of outgassing characters on the structure of resist base polymers. We also investigated pressure increase resulting from outgassed species from 157-nm-irradiated fluoropolymers and their resists. The information obtained is as follows: (1) Side-chain-fluorinated polymers produce fluorine-containing outgassed species via scission of side chain. (2) Some fluoropolymers produce HF during 157 nm exposure. Fluorine is suggested to easily dissociate and react with hydrogen to form HF in the exposure of copolymer of tetrafluoroethylene and tert-butyl α-fluoroacrylate. (3) Outgassed species related to deprotection of blocking group originate from some acetal resists during and after exposure at room temperature, although the species were observed only during exposure in the exposure of corresponding base polymer. (5) Regarding base polymers and their resists employed, pressure increase in vacuum chamber becomes smaller in the next order, base polymers with ester groups in their side chains, base polymers having side chains other than ester groups, base polymers without side chains.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485200
Show Author Affiliations
Yoshinori Matsui, Osaka Univ. (Japan)
Satoshi Umeda, Osaka Univ. (Japan)
Shiro Matsui, Osaka Univ. (Japan)
Shu Seki, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
Seiichi Ishikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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