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Proceedings Paper

TMAH soak process optimization with DNQ positive resist for lift-off applications
Author(s): Salem K. Mullen; Medhat A. Toukhy; Ping-Hung Lu; Sunit S. Dixit; Paul Sellers
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Paper Abstract

Reduced developer soak rinse time and increased post exposure bake temperatures were found to be the most effective process variables in extending the resist overhang. An extended resist overhang of 0.7 μm can be obtained under extreme conditions. Less extreme conditions were found to be more optimum for improved resolution with adequate lift-off profiles. The optimized process for AZ MIR 703 resist offers a range of options in resolution linearity, trench size bias, overhang and delta trench top-bottom width. Trench resolution of 0.2 μm is demonstrated in i-line regime.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485198
Show Author Affiliations
Salem K. Mullen, Clariant Corp. (United States)
Medhat A. Toukhy, Clariant Corp. (United States)
Ping-Hung Lu, Clariant Corp. (United States)
Sunit S. Dixit, Clariant Corp. (United States)
Paul Sellers, Clariant Corp. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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