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Proceedings Paper

Novel silicon-containing polymers as photoresist materials for EUV lithography
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Paper Abstract

Performance requirements for EUV resists may require the development of entirely new polymer platforms. In the first approach, we have synthesized norbornene-based copolymers using ring-opening metathesis polymerization (ROMP). Silicon containing norbornenes were synthesized and copolymerized with a series of monomers having acid sensitive and polar groups, including nitrile, carboxylic acid, hydroxyl, and anhydride functions to achieve random copolymers with suitable properties to be applied as resist materials. Using well-characterized metal alkylidene complexes, we could prepared polymers having controlled molecular weights and low polydispersities. From initial exposure studies using an EUV interferometer, we were able to pattern 150 nm pitchs without additional optimization. In the second approach, polysilane has been copolymerized with acid sensitive monomers (acrylate and styrene derivatives) to produced chemically amplified polysilane-copolymers.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485184
Show Author Affiliations
Young-Je Kwark, Cornell Univ. (United States)
Juan-Pablo Bravo-Vasquez, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)
Heidi B. Cao, Intel Corp. (United States)
Hai Deng, Intel Corp. (United States)
Robert P. Meagley, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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