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Proceedings Paper

Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond
Author(s): Dirk Pfeiffer; Arpan P. Mahorowala; Katherina Babich; David R. Medeiros; Karen E. Petrillo; Marie Angelopoulos; Wu-Song Huang; Scott Halle; Colin Brodsky; Scott D. Allen; Steven J. Holmes; Ranee W. Kwong; Robert Lang; Phillip J. Brock
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Paper Abstract

Extending 193nm lithography to well below 100nm resolution will depend on high NA tooling coupled with thin resist processing. Semiconductor manufacturing uses BARC's (Bottom Antireflective Coating) based on organic spin coatable polymers, to improve the resolution by absorbing light that otherwise will be reflected back into the resist. However, the use of organic BARC's for patterning sub 100nm features will be limited due to poor etch selectivity to the photo resist. IBM has developed a new class of polymers that can function as planarizing BARC's. These materials show an etch selectivity to the photo resist in excess of 3:1 in fluorocarbon based ARC-open RIE chemistry. The hardmask properties of these materials for oxide open are equivalent to typical resists. Furthermore these materials can be implemented like organic ARC's and are stripped in resist strips available in manufacturing. Basic materials characterization data, optical tunability, lithographic performance with different resists, process window data, and complete integration schemes will be presented.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485178
Show Author Affiliations
Dirk Pfeiffer, IBM Thomas J. Watson Research Ctr. (United States)
Arpan P. Mahorowala, IBM Thomas J. Watson Research Ctr. (United States)
Katherina Babich, IBM Thomas J. Watson Research Ctr. (United States)
David R. Medeiros, IBM Thomas J. Watson Research Ctr. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Wu-Song Huang, IBM Microelectronics Div. (United States)
Scott Halle, IBM Microelectronics Div. (United States)
Colin Brodsky, IBM Microelectronics Div. (United States)
Scott D. Allen, IBM Microelectronics Div. (United States)
Steven J. Holmes, IBM Microelectronics Div. (United States)
Ranee W. Kwong, IBM Microelectronics Div. (United States)
Robert Lang, IBM Microelectronics Div. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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