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Proceedings Paper

Rinse liquid to improve pattern collapse behavior
Author(s): Geunsu Lee; Sung-Koo Lee; Young-Sun Hwang; Jae-Chang Jung; Cheol-Kyu Bok; Seung-Chan Moon; Ki-Soo Shin
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Paper Abstract

We designed and prepared a test mask to study a pattern collapse (PC) and investigated a rinse dependency. We report the effect of surfactant and solvent in rinse. The collapse behavior was quantified in terms of the first collapsed critical dimension (FCCD) in 90nm L/S ArF resist patterns. In-house rinse liquids (SE series) showed relatively lower surface tension (ST) compared to commercial one. They greatly reduced pattern collapse behavior (PCB) of from FCCD 102nm to 85nm L/S using these solutions. However, SE-100 showed defect by bubble and the others show bad compatibility with photoresist. SES-100 is the only rinse liquid candidate in this experiment.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485175
Show Author Affiliations
Geunsu Lee, Hynix Semiconductor, Inc. (South Korea)
Sung-Koo Lee, Hynix Semiconductor, Inc. (South Korea)
Young-Sun Hwang, Hynix Semiconductor, Inc. (South Korea)
Jae-Chang Jung, Hynix Semiconductor, Inc. (South Korea)
Cheol-Kyu Bok, Hynix Semiconductor, Inc. (South Korea)
Seung-Chan Moon, Hynix Semiconductor, Inc. (South Korea)
Ki-Soo Shin, Hynix Semiconductor, Inc. (South Korea)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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