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Proceedings Paper

Impact of surfactant in developer and rinse solution on 193-nm lithography performance
Author(s): Peng Zhang; Manuel Jaramillo; Danielle M. King; Brenda Ross; David Witko; Ted A. Paxton; Todd Davis
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Paper Abstract

In this study, surfactant-formulated developer and rinse solutions were used to enhance the performance of a 193 nm lithography process. The wetting and interfacial characteristics of surfactant-formulated solutions were studied and utilized as a screening tool for optimum formulation. The selected formulation was compared to the non-formulated TMAH development and DI water rinse process. Surfactants in developer and rinse solution significantly reduced pattern collapse, enabling an 86% increase of critical normalized aspect ratio. This corresponds to an increase in the usable resist thickness for an 80 nm 1:1 feature from 179 nm to 332 nm. Additional benefit provided by surfactant formulated process was a 25% improvement on both within-wafer and wafer-to-wafer critical dimension uniformity.

Paper Details

Date Published: 12 June 2003
PDF: 7 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485170
Show Author Affiliations
Peng Zhang, Air Products and Chemicals, Inc. (United States)
Manuel Jaramillo, Air Products and Chemicals, Inc. (United States)
Danielle M. King, Air Products and Chemicals, Inc. (United States)
Brenda Ross, Air Products and Chemicals, Inc. (United States)
David Witko, ASML (United States)
Ted A. Paxton, ASML (United States)
Todd Davis, ASML (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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