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Proceedings Paper

Impact of thin resist processes on post-etch LER
Author(s): Arpan P. Mahorowala; Dario L. Goldfarb; Karen Temple; Karen E. Petrillo; Dirk Pfeiffer; Katherina Babich; Marie Angelopoulos; Gregg M. Gallatin; Stacy Rasgon; Herbert H. Sawin; Scott D. Allen; Robert N. Lang; Margaret C. Lawson; Ranee W. Kwong; Kuang-Jung Chen; Wenjie Li; Pushkara Rao Varanasi; Martha I. Sanchez; Hiroshi Ito; Gregory M. Wallraff; Robert D. Allen
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Paper Abstract

While evaluating 193 nm, and early versions of 157 nm and EUV resists, the lithography community has focused on post-develop LER values derived from image analysis of top-down SEM micrographs. These numbers, however, do not capture the tendency of a resist to facet and roughen during plasma etching processes. They also do not convey any information about the role of the anti-reflective coatings/hard masks in the transfer of resist roughness into the underlying substrate. From a manufacturing perspective, it is the "LER" of the final etched substrate that is more important. This paper systematically studies the impact of resist polymer platform and thickness, etching conditions, and presence of organic and inorganic anti-reflective coatings/hard masks on substrate roughening. An AFM technique, previously developed by Reynolds and Taylor, is used to measure the feature sidewall roughness as a function of etch depth. This technique enables us to calculate the sidewall roughness of the resist, ARC/hard mak and substrate surfaces simultaneously, and determine correlations that may exist between these values. The paper identifies and demonstrates patterning methodologies that can be used to achieve "smooth" substrate surfaces even when the resist is "thin".

Paper Details

Date Published: 12 June 2003
PDF: 12 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485168
Show Author Affiliations
Arpan P. Mahorowala, IBM Thomas J. Watson Research Ctr. (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Karen Temple, IBM Thomas J. Watson Research Ctr. (United States)
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
Dirk Pfeiffer, IBM Thomas J. Watson Research Ctr. (United States)
Katherina Babich, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Gregg M. Gallatin, IBM Thomas J. Watson Research Ctr. (United States)
Stacy Rasgon, Massachusetts Institute of Technology (United States)
Herbert H. Sawin, Massachusetts Institute of Technology (United States)
Scott D. Allen, IBM Microelectronics Div. (United States)
Robert N. Lang, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)
Ranee W. Kwong, IBM Microelectronics Div. (United States)
Kuang-Jung Chen, IBM Microelectronics Div. (United States)
Wenjie Li, IBM Microelectronics Div. (United States)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
Martha I. Sanchez, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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