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Proceedings Paper

Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography
Author(s): Sungeun Hong; Yusuke Takano; Takashi Kanda; Takanori Kudo; Munirathna Padmanaban; Hatsuyuki Tanaka; Si-Hyeung Lee; Jung-Hyeon Lee; Sang-Gyun Woo
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Paper Abstract

The controllability of iso-dense bias generated by 193nm lithography was intensively studied with novel RELACS material. The shrinkage, shrinkage linearity, and shrinkage bias were considerably relied on MB temperature. It is the most powerful technology that changing of mixing bake (MB) temperature can control iso-dense bias. Furthermore, AZ Exp.R600 has several attractive advantages, which are able to improve LWS, LER, sidewall roughness of contact holes, surface roughness, and side lobe. Moreover, we have successfully developed a novel RELACS material to be applied for the patterning of sub-70nm contact hole.

Paper Details

Date Published: 12 June 2003
PDF: 12 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485155
Show Author Affiliations
Sungeun Hong, Clariant (Japan) K.K. (Japan)
Yusuke Takano, Clariant (Japan) K.K. (Japan)
Takashi Kanda, Clariant (Japan) K.K. (Belgium)
Takanori Kudo, Clariant Corp. (United States)
Munirathna Padmanaban, Clariant Corp. (United States)
Hatsuyuki Tanaka, Clariant (Japan) K.K. (Japan)
Si-Hyeung Lee, Samsung Electronics Co., Ltd. (South Korea)
Jung-Hyeon Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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