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Proceedings Paper

X-ray absorption spectroscopy to probe interfacial issues in photolithography
Author(s): Joseph L. Lenhart; Daniel A. Fischer; Sharadha Sambasivan; Eric K. Lin; Ronald L. Jones; Christopher L. Soles; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos
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Paper Abstract

We utilize near edge X-ray absorption fine structure spectroscopy (NEXASFS) to provide detailed chemical insight into two interfacial problems facing sub-100 nm patterning. First, chemically amplified photo-resists are sensitive to surface phenomenon, which causes deviations in the pattern profile near the interface. Striking examples include T-topping, closure, footing, and undercutting. NEXAFS was used to examine surface segregation of a photo-acid generator at the resist/air interface and to illustrate that the surface extent of deprotection in a model resist film can be different than the bulk extent of deprotection. Second, line edge roughness becomes increasingly critical with shrinking patterns, and may be intimately related to the line edge deprotection profile. A NEXAFS technique to surface depth profile for compositional gradients is described with the potential to provide chemical information about the resist line edge.

Paper Details

Date Published: 12 June 2003
PDF: 14 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485149
Show Author Affiliations
Joseph L. Lenhart, Sandia National Labs. (United States)
Daniel A. Fischer, National Institute of Standards and Technology (United States)
Sharadha Sambasivan, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Ronald L. Jones, National Institute of Standards and Technology (United States)
Christopher L. Soles, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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