Share Email Print
cover

Proceedings Paper

Deprotection volume characteristics and line-edge morphology in chemically amplified resists
Author(s): Ronald L. Jones; Tengjiao Hu; Vivek M. Prabhu; Christopher L. Soles; Eric K. Lin; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos; Brian Trinque; C. Grant Willson
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The form and magnitude of line edge roughness (LER) is increasingly important in semiconductor processing due to continued reductions in feature sizes. While a large body of work connects processing factors to LER magnitude, the spatial dependence of LER is needed to provide a more complete description. The distribution of deprotection within the resist is represented as a collection deprotection paths created by individual photoacid generators (PAGs). In the limit of dilute PAG concentration, the form and size of the average deprotection path is measured using Small Angle Neutron Scattering (SANS) for a model photoresist polymer and PAG mixture. The heterogeneity of the deprotection volume produces “fuzzy blobs”. The shape of these blobs is compared to the form of LER at a idealized sidewall. The sidewall morphology is consistent with models of spatially random etching up to a cutoff length scale. The cutoff length scale is ≈ 5 times the size of a single deprotection volume, suggesting that collective phenomena are responsible for observed LER.

Paper Details

Date Published: 12 June 2003
PDF: 10 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485146
Show Author Affiliations
Ronald L. Jones, National Institute of Standards and Technology (United States)
Tengjiao Hu, National Institute of Standards and Technology (United States)
Vivek M. Prabhu, National Institute of Standards and Technology (United States)
Christopher L. Soles, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Brian Trinque, Univ. of Texas at Austin (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)
U. of Texas Austin (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

© SPIE. Terms of Use
Back to Top