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Proceedings Paper

Synthesis and evaluation of novel organoelement resists for EUV lithography
Author(s): Junyan Dai; Christopher Kemper Ober; Sang-Ouk Kim; Paul F. Nealey; Victoria Golovkina; Jangho Shin; Lin Wang; Franco Cerrina
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Paper Abstract

EUV lithography is to date the most promising NGL technology for the sub-50nm technology node. In this work, we have designed and synthesized several types of organoelement resists with minimum oxygen content for high transparency. Either silicon or boron was incorporated in the resist structures to improve both etch resistance and transparency. In the exposure studies, it was possible to image the silicon-containing polymers to 22.5 nm line/space patterns using EUV interferometry. A second type of EUV transparent resist platform was studied involving boron-containing polymers. Carborane carboxylic acid was attached to a copolymer backbone to introduce boron atoms with controlled structure attachment level. In a preliminary study, these polymers could be imaged by 248nm exposure. Effect of structure on line edge roughness is also to be included in the discussion.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485116
Show Author Affiliations
Junyan Dai, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)
Sang-Ouk Kim, Univ. of Wisconsin/Madison (United States)
Paul F. Nealey, Univ. of Wisconsin/Madison (United States)
Victoria Golovkina, Univ. of Wisconsin/Madison (United States)
Jangho Shin, Univ. of Wisconsin/Madison (United States)
Lin Wang, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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