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Proceedings Paper

Contact printing to the 45-nm node using a binary mask and 248-nm lithography
Author(s): Karen E. Suhm; Daniel C. Baker; Brian Hesse; Kevin Clark; Scott Coleman
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Paper Abstract

Contact size will continue to shrink aggressively for future technology nodes. The high costs and uncertainties associated with 193 nm lithography have made extension of DUV the mainstream approach for the semiconductor industry. Phase shift masks have successfully achieved deep sub-wavelength printing, pushing k1 well below 0.5, but with accompanying high mask-making costs. We have examined the practical limits of 248 nm lithography for contact printing utilizing cost-effective methods. Using a single binary mask, the IDEAL-Smile resolution enhancement technique (RET), in combination with aggressive photoresist technology and post-develop processing, we have demonstrated contact printing capability suitable for the 45 nm generation. A variety of DUV photoresist chemistries and processing techniques are available for imaging small contacts. We have examined state of the art ESCAP and hybrid-acetal photoresists as well as a silicon-containing bi-layer material for their direct printing capability and post-develop thermal processing properties. A photoresist with the best combination of optical, thermal, and mechanical properties was selected. This photoresist was then used to produce sub-50nm contacts. For the numerical aperture used in this study (0.73) this equates to a k1 factor near 0.15.

Paper Details

Date Published: 12 June 2003
PDF: 14 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485102
Show Author Affiliations
Karen E. Suhm, Microchip Technology, Inc. (United States)
Daniel C. Baker, Microchip Technology, Inc. (United States)
Brian Hesse, Microchip Technology, Inc. (United States)
Kevin Clark, Microchip Technology, Inc. (United States)
Scott Coleman, Canon USA Inc. (United States)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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