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Proceedings Paper

Fluoropolymer resists for 157 nm lithography
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Paper Abstract

Fluoropolymers have been shown to be one of the best materials for high transparency of 157 nm wavelength radiation. Both resists and pellicles are being designed from such materials. One of our approaches to improved transparency for 157 nm resists is based upon fluorinated variations of polymethacrylate and polyhydroxystyrene derivatives. Lithographic studies were carried out on experimental resist platforms using 157 nm and 248 nm steppers, and it was shown that, after selective modification, it is possible to use conventional resist backbones, such as acrylic or styrenic, in the design of single-layer resists for 157 nm lithography. It has been demonstrated in our studies that 157 nm absorbance of these materials can be as low as 1.5-2.0μm-1. Another approach to 157 nm resist design is based upon fluorinated backbone variations. Research will be described focusing on several new monomers having fluorine functions such as -F and -CF3 groups near a polymerizable double bond to improve transparency at 157 nm and to raise the resist glass transition temperature compared to their hydrocarbon analogues. Due to the lower electron density of the double bond, these monomers can be copolymerized with electron-rich vinyl monomers. As an extension to this strategy, we are synthesizing novel fluoropolymers having partially fluorinated monocyclic structures with radical cyclo-polymerization. These polymers have the C-F bond on the polymer main chain and also possess acid labile groups as part of a ring structure to eliminate degassing. In order to further enhance the transparency of these systolic polymers at 157 nm, we have eliminated the carbonyl group. The cyclic nature of the polymer will result in a high glass transition temperature.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485097
Show Author Affiliations
Vaishali Raghu Vohra, Cornell Univ. (United States)
Xiang-Qian Liu, Cornell Univ. (United States)
Katsuji Douki, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)
Will Conley, International SEMATECH (United States)
Paul Zimmerman, International SEMATECH (United States)
Daniel Miller, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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