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Proceedings Paper

Monitoring of photo-resist poisoning
Author(s): Julia Simon; Francois Weisbuch; Yves Quere; Olivier Louveau; Christine Bourlot
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Paper Abstract

Resist poisoning is one of the key issues linked to low-k dielectric and copper integration. This phenomenon tends to be amplified in dual damascene architecture, where both processes and materials are incriminated, especially when porous low-k dielectrics are integrated. In this paper we present and implement the dose to clear compensation method, easily undertaken with standard lithography and metrology tools, to evaluate quantitatively 248 and 193nm photo-resist poisoning on both MSQ and porous MSQ substrates. We show the amplification of resist poisoning due to the reservoir effect in porous MSQ, and address the role of the porosity in the phenomenon. We demonstrate the efficiency of the method in evaluating hard masks compatibility, wet and dry stripping processes, and its ability in screening photo-resist in term of poisoning sensitivity.

Paper Details

Date Published: 12 June 2003
PDF: 7 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485091
Show Author Affiliations
Julia Simon, CEA-LETI (France)
Francois Weisbuch, STMicroelectronics (France)
Yves Quere, CEA-LETI (France)
Olivier Louveau, STMicroelectronics (France)
Christine Bourlot, CEA-LETI (France)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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