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Proceedings Paper

Application of reversed pattern transfer process for sub-90-nm technology
Author(s): Koutaro Sho; Tsuyoshi Shibata; Hirokazu Kato; Junko Abe; Yoshinobu Ohnishi; Kazuhiko Urayama
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Paper Abstract

A reversed pattern transfer technique combined with ultra thin resist process is discussed. In the reversed pattern transfer technique, first a resist pattern is formed over an organic under layer, next a Water-Soluble Silicone (WSS) is coated on the pattern and recessed by RIE under oxide etching conditions until the top of the resist pattern appears (i.e. the silicone is filled between the resist patterns), and finally, the resist pattern and the under layer is etched by RIE under resist etching conditions, whereby the resist pattern is transferred to the under layer. For the middle imaging layer, cyclic olefin-maleic anhidride (COMA) - acrylate hybrid type ArF photo resist (1250 A thickness) and EB resist (700 A thickness) are used. 70 nm L/S patterns (for EB) and 110 nm L/S patterns (for ArF) were successfully transferred to the under layer using reversed pattern transfer technique.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485089
Show Author Affiliations
Koutaro Sho, Toshiba Corp. (Japan)
Tsuyoshi Shibata, Toshiba Corp. (Japan)
Hirokazu Kato, Toshiba Corp. (Japan)
Junko Abe, Toshiba Corp. (Japan)
Yoshinobu Ohnishi, Toshiba Corp. (Japan)
Kazuhiko Urayama, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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