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Proceedings Paper

193-nm multilayer imaging systems
Author(s): James D. Meador; Doug Holmes; William DiMenna; Mariya I. Nagatkina; Michael D. Rich; Tony D. Flaim; Randy Bennett; Ichiro Kobayashi
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Paper Abstract

This paper highlights the performance of new materials that have been developed for use in 193-nm trilayer microlithography. The products are embedded etch masking layers (EMLs) and bottom antireflective coatings (BARCs). Both coatings are spin applied from organic solvent(s) and then thermoset during a hot plate bake. The EMLs (middle layers) are imaging compatible with JSR, Sumitomo, and TOK 193-nm photoresists. Best-case trilayer film stacks have given 100-nm dense and semi-dense L/S. Plasma etching, selectivities and solution compatibility performance of the EMLs meet or exceed proposed product targets. In addition, the EMLs exhibit both solution and plasma etching properties that should lead to successful rework processes for photoresists. The multiplayer BARCs offer good thick film coating quality and contribute to excellent images when used in trilayer applications. Combining the EMLs, which are nearly optically transparent (k=0.04) at 193-nm, with the new trilayer BARCs results in outstanding Prolith simulated reflectance control. In one modeling example, reflectance is a flat line at 0.5% on five different substrates for BARC thicknesses between 300 and 700-nm.

Paper Details

Date Published: 12 June 2003
PDF: 12 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485082
Show Author Affiliations
James D. Meador, Brewer Science, Inc. (United States)
Doug Holmes, Brewer Science, Inc. (United States)
William DiMenna, Brewer Science, Inc. (United States)
Mariya I. Nagatkina, Brewer Science, Inc. (United States)
Michael D. Rich, Brewer Science, Inc. (United States)
Tony D. Flaim, Brewer Science, Inc. (United States)
Randy Bennett, Brewer Science, Inc. (United States)
Ichiro Kobayashi, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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