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Proceedings Paper

New models for the simulation of post-exposure bake of chemically amplified resists
Author(s): Daniela Matiut; Andreas Erdmann; Bernd Tollkuehn; Armin Semmler
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Paper Abstract

Post exposure bake (PEB) models in the lithography simulator SOLID-C have been extended in order to improve the description of kinetic and diffusion phenomena in chemically amplified resists. We have implemented several new models and options which take into account effects such as the diffusion of quencher base, different approaches to model the neutralization between photogenerated acid and a quencher base, spontaneous loss of quencher, and arbitrary dependencies of the diffusion coefficients on acid or inhibitor, respectively. In this study, the impact of these new model options on critical phenomena like iso-dense bias, linearity and line end shortening are examined. The simulations were performed for a calibrated KrF/ArF resist models.

Paper Details

Date Published: 12 June 2003
PDF: 11 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485080
Show Author Affiliations
Daniela Matiut, Fraunhofer-Institut fur Integrierte Systeme und Bauelementetechnolgie (Germany)
Andreas Erdmann, Fraunhofer-Institut fur Integrierte Systeme und Bauelementetechnolgie (Germany)
Bernd Tollkuehn, Fraunhofer-Institut fur Integrierte Systeme und Bauelementetechnolgie (Germany)
Armin Semmler, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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