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Proceedings Paper

Nonshrinkable photoresists for ArF lithography
Author(s): Jin-Baek Kim; Tae Hwan Oh; Jae-Hak Choi; Jae-Jun Lee
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Paper Abstract

Outgassing from the resist causes volume shrinkage of the resist film and extensive damage to optical lenses of exposure tools. Image distortion and throughput loss can take place due to the outgassing. In this study, we designed and synthesized a new acid labile group, 7,7-dimethyloxepan-2-one, which was introduced into the matrix polymers for ArF chemically amplified resists. The 7,7-dimethyloxepan-2-one group was readily cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposed region after post-exposure bake. The resist patterns of 0.22 μm feature size were obtained with a conventional developer using an ArF exposure tool.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485074
Show Author Affiliations
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)
Tae Hwan Oh, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Hak Choi, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Jun Lee, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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