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Proceedings Paper

Practical extracting method of PEB parameters by using rotating compensator spectroscopic ellipsometer
Author(s): Hyoung-Hee Kim; Young-Keun Kwon; Seung-Wook Park; Kyung-Yoon Bang; Ilsin An; Kun-Sang Lee; Hye-Keun Oh
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Paper Abstract

It is important that more accurate process parameters are extracted to predict the results of each process by simulation. It is well known that both refractive index and absorption coefficient of photoresist (PR) are varied when the thickness of PR is changed during post exposure bake (PEB) process due to the de-protection of polymer and decrease of free volume. We applied fast scanning rotating compensator spectroscopic ellipsometry (RCSE) to PEB parameters extraction of chemically amplified resist (CAR). It is possible to analyze thin film properties such as refractive index with respect to each exposure wavelength. But we only used the obtained resist thickness change data of exposed CAR before and after PEB by using RCSE in order to find out the easiest way of extracting correct PEB parameters. The decreasing of PR thickness during PEB was measured. Exposure and PEB conditions were changed for various RCSE measurements and the differences of the optical and physical properties were used to extract the PEB parameters; kamp, kloss and activation energy of de-protection. This method can be easily adopted in a normal fab and lab so that one can easily determine the correct PEB parameters.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485071
Show Author Affiliations
Hyoung-Hee Kim, Hanyang Univ. (South Korea)
Young-Keun Kwon, Hanyang Univ. (South Korea)
Seung-Wook Park, Nanyang Univ. (South Korea)
Kyung-Yoon Bang, Hanyang Univ. (South Korea)
Ilsin An, Hanyang Univ. (South Korea)
Kun-Sang Lee, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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