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Proceedings Paper

New trilayer resist process using a phenol-capped siloxane-based middle-layer for ArF resist process
Author(s): Akihiko Otoguro; Satoshi Takechi; Takatoshi Deguchi; Isamu Hanyu
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Paper Abstract

We have developed a new tri-layer resist process to meet requirements related to etching durability and aspect ratio of ArF process. The new phenol capped siloxane-based middle-layer does not change thickness and does not increase particles even after six months. Additionally no footing pattern formation occurs. Our middle-layer has a function as anti-reflect and simulated reflectivity in a top ArF resist layer is less than 1.0% at the tri-layer structure by controlling middle-layer and under-layer thickness. The critical dimension (CD) uniformity of 140 nm contact hole pattern is less than 6 nm (3 sigma) intra wafer. This new middle layer gives high etching sensitivity relative to under-layer and we can demonstrate pattern transfer using a contact hole pattern. We have applied this system to a dual damascene process and successfully completed a 280-nm pitch multilevel copper interconnection. We conclude that our new tri-layer resist process is suitable for use in mass production of 90-nm node LSI and below.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485062
Show Author Affiliations
Akihiko Otoguro, Fujitsu, Ltd. (Japan)
Satoshi Takechi, Fujitsu, Ltd. (Japan)
Takatoshi Deguchi, Fujitsu, Ltd. (Japan)
Isamu Hanyu, Fujitsu, Ltd. (Japan)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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