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Proceedings Paper

Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography
Author(s): Young-Sik Kim; Tae Jun You; Jin-Soo Kim; Seok-Kyun Kim; Keun-Kyu Kong; Young-Deuk Kim; HyeongSoo Kim
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Paper Abstract

Most chip makers want KrF lithography is extended below sub 100nm lithography due to cost and process stability, even though ArF lithography has been growing and its performance is enough to apply to 100nm node. But process control of KrF lithography will become difficult at sub 100nm node era because of difficulty of mask making, accuracy of optical proximity correction (OPC), lens effects caused by strong off-axis illumination, need more tool accuracies than ever, and so on.

Paper Details

Date Published: 2 June 2003
PDF: 7 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.485009
Show Author Affiliations
Young-Sik Kim, Hynix Semiconductor Inc. (South Korea)
Tae Jun You, Hynix Semiconductor Inc. (South Korea)
Jin-Soo Kim, Hynix Semiconductor Inc. (South Korea)
Seok-Kyun Kim, Hynix Semiconductor Inc. (South Korea)
Keun-Kyu Kong, Hynix Semiconductor Inc. (South Korea)
Young-Deuk Kim, Hynix Semiconductor Inc. (South Korea)
HyeongSoo Kim, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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