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Proceedings Paper

Supercritical resist dry technique for electron-beam projection lithography (EPL)
Author(s): George Petricich; Kohei Suzuki; Jun Munemasa; Tetsuya Yoshikawa; Nobuyuki Kawakami; Sumito Shimizu; Manabu Watanabe
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Paper Abstract

A single-layer resist process for a technology nodes at or below 65nm utilizing a novel supercritical dry technique and Electron-beam Projection Lithography (EPL) technology is discussed. EPL is inhernelty advantageous in imaging sub-65nm geometries with high aspect ratios. Pattern collapse of these high aspect ratio (resist) structures, however, is a critical and limiting issue. By employing our novel supercritical carbon dioxide (SCCO2) dry technique, 70nm and 60nm lines and spaces patterns with a resist thickness of 250nm, whose aspect ratio is 3.5 and 4.2 respectively, have been successfully demonstrated without resist pattern collapse.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484990
Show Author Affiliations
George Petricich, DNS Electronics, LLC (United States)
Kohei Suzuki, Kobelco Research Institute, Inc. (Japan)
Jun Munemasa, Kobe Steel, Ltd. (Japan)
Tetsuya Yoshikawa, Kobe Steel, Ltd. (Japan)
Nobuyuki Kawakami, Kobe Steel, Ltd. (Japan)
Sumito Shimizu, Nikon Corp. (Japan)
Manabu Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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