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Proceedings Paper

Process for improved reflectivity uniformity in extreme-ultraviolet lithography (EUVL) masks
Author(s): Carey Thiel; Kenneth C. Racette; Emily Fisch; Mark Lawliss; Louis Kindt; Chester Huang; Robin Ackel; Max Levy
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Paper Abstract

Fabrication of EUVL masks requires formation of both a repair buffer layer and an EUV absorber layer on top of a molybdenum/silicon (Mo/Si) multilayer coated mask blank. Alteration of the Mo/Si multilayer during etch, repair or cleaning of the EUVL mask can be detrimental to the reflectivity and thus the functionality of the final mask. IBM’s Next Generation Lithography (NGL) group has reported on EUVL mask fabrication based on an absorber of low stress chromium (Cr) and a buffer layer of silicon dioxide (SiO2). Due to poor etch selectivity between SiO2 and the underlying silicon capping layer, the finished masks had non-uniform and reduced EUV reflectivity after processing. This led to the development of an alternative absorber stack combination of an absorber layer of low stress TaNx on a buffer layer of low stress Cr. This paper describes the improved reflectivity uniformity of this type of mask along with several aspects of mask quality, such as CD control and image placement.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484988
Show Author Affiliations
Carey Thiel, IBM Microelectronics Div. (United States)
Kenneth C. Racette, IBM Microelectronics Div. (United States)
Emily Fisch, IBM Microelectronics Div. (United States)
Mark Lawliss, IBM Microelectronics Div. (United States)
Louis Kindt, IBM Microelectronics Div. (United States)
Chester Huang, IBM Microelectronics Div. (United States)
Robin Ackel, IBM Microelectronics Div. (United States)
Max Levy, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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