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Proceedings Paper

Shot noise effect on printing small contacts in EUVL
Author(s): Sang Hun Lee; Robert L. Bristol; John E. Bjorkholm
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Paper Abstract

A theoretical analysis of the capability of Extreme Ultra-violet Lithography (EUVL) to print contacts in the range of 30-50 nm with acceptable yield is presented. We study the problem from the viewpoint of two issues: the effects of shot noise and the available process window. Shot noise is modeled as a simple statistical fluctuation of the number of photons absorbed in a given contact. The process windows for various size contacts are simulated for a representative 0.25-NA EUV tool. We find that EUVL should be able to print 30 nm contacts with a reasonable exposure latitude, and we also conclude that the effects of shot noise will not significantly decrease yield at this exposure latitude for a resist with a dose-to-clear value of ~5 mJ/cm2. A dose-to-clear value becomes ~2 mJ/cm2 for 50 nm contacts. In addition, a comparison at the same node shows that 50-nm contacts have a greater process window than 30-nm lines.

Paper Details

Date Published: 16 June 2003
PDF: 10 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484982
Show Author Affiliations
Sang Hun Lee, Intel Corp. (United States)
Robert L. Bristol, Intel Corp. (United States)
John E. Bjorkholm, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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