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Proceedings Paper

Defect printability of hole pattern in electron projection lithography
Author(s): Jiro Yamamoto; Yoichi Tomo; Sumito Shimizu; Teruo Iwasaki; Masaki Yamabe
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Paper Abstract

We investigated the defect printability of hole patterns in electron projection lithograpy (EPL) using a diamond reticle with a programmed defect pattern. The reticle was fabricated by NTT-AT and wafer exposure was performemd using Nikon's EB projection experimental column. We simulated the defect printability to udnerstand in greater detail. We found that the mask error enhancement factor (MEF) of the size shift defect category exceeded the value of one and was degraded by the amount of beam blur. On the other hand, the printability of the dot defect category was lower than the shift category. In particular, pint hole defects smaller than 100 nm were not printed. However, the defect types of under size shift, truncation, edge intrusion, and corner intrusion (they decreased the opening area), actually increased the defect size because the defect was too small for hole patterns to print. In general, the defect printability of hole patterns depends on the beam blur, and the printed error size at the hole patterns getting larger than the line patterns. We have to pay clsoer attention to the hole pattern defect than to the line patterns.

Paper Details

Date Published: 16 June 2003
PDF: 11 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484976
Show Author Affiliations
Jiro Yamamoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yoichi Tomo, Sony Corp. (Japan)
Sumito Shimizu, Nikon Corp. (Japan)
Teruo Iwasaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masaki Yamabe, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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