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Proceedings Paper

LPP-based reflectometer for characterization of EUV lithography systems
Author(s): Akira Miyake; Takeshi Miyachi; Mitsuaki Amemiya; Takayuki Hasegawa; Nobuaki Ogushi; Takeshi Yamamoto; Fumitaro Masaki; Yutaka Watanabe
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Paper Abstract

An EUV reflectometer, based on a laser-produced plasma (LPP) light source, has been developed for characterization of EUV lithography systems. The reflectometer consists of the LPP light source, a prefocusing toroidal mirror, a grating monochromator, a polarizer, a beam intensity monitor, a refocusing toroidal mirror and a sample stage. The LPP light source is driven by a Nd:YAG laser; the laser beam is focused onto a copper tape target. A debris mitigation system that uses a rotating shutter was developed. Higher-orders formthe grating monochromator were suppressed to less than 0.2% of incident beam intensity by total reflection of three grazing incidence mirros. In order to compensate for beam intensity instability, a beam intensity monitor using a grating beamsplitter was installed between the refocusing mirror and the sample. Beam intensity instability can be corrected to less than 0.1% by using the beam intensity monitor.

Paper Details

Date Published: 16 June 2003
PDF: 9 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484969
Show Author Affiliations
Akira Miyake, Canon Inc. (Japan)
Takeshi Miyachi, Canon Inc. (Japan)
Mitsuaki Amemiya, Canon Inc. (Japan)
Takayuki Hasegawa, Canon Inc. (Japan)
Nobuaki Ogushi, Canon Inc. (Japan)
Takeshi Yamamoto, Canon Inc. (Japan)
Fumitaro Masaki, Canon Inc. (Japan)
Yutaka Watanabe, Canon Inc. (Japan)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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