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Proceedings Paper

Analysis of critical dimension uniformity for Step and Flash imprint lithography
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Paper Abstract

Step and Flash Imprint Lithography (SFIL) is one of several new nano-imprint techniques being actively developed. While SFIL has been shown to be capable of sub-30 nm resolution, critical dimension (CD) control of imprinted features must be demonstrated if SFIL Is to become a viable and production worthy lithography technique. In the current study, a Molecular Imprints Imprio-100 system was used to imprint resolution patterns on 200 mm wafers. A characterization of critical dimension uniformity over the all-quartz template was done and compared to the same features printed on wafers. This analysis was performed for 100, 80, 50, and 30 nm features in three ways: over a single die using 64 sites arrayed across a 21 mm field, from field-to-field for 37 die across a single wafer, and from wafter-to-wafer for six wafers. Results show that CD's transfer from template to wafer with a slight positive bias which is greatest for 50 and 30 nm line sizes. Feature profiles studies. Despite this, the maximum calculated component of process variation from the SFIL process itself was calculated to be only 6 nm.

Paper Details

Date Published: 16 June 2003
PDF: 10 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484923
Show Author Affiliations
David P. Mancini, Motorola, Inc. (United States)
Kathleen A. Gehoski, Motorola, Inc. (United States)
William J. Dauksher, Motorola, Inc. (United States)
Kevin J. Nordquist, Motorola, Inc. (United States)
Douglas J. Resnick, Motorola, Inc. (United States)
Philip Schumaker, Molecular Imprints, Inc. (United States)
Ian McMackin, Molecular Imprints, Inc. (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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