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Proceedings Paper

EUV interferometry of the 0.3-NA MET optic
Author(s): Kenneth A. Goldberg; Patrick P. Naulleau; Paul Denham; Senajith B. Rekawa; Keith H. Jackson; Erik H. Anderson; J. Alexander Liddle; Jeffrey Bokor
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Paper Abstract

A new generation of 0.3 numerical aperture prototype EUV optical systems is now being produced to provide an opportunity for early learning at 20-nm feature size. Achieving diffraction limited performance from these two-mirror, annular projection optics poses a challenge for every aspect of the fabrication process, including final alignment and interferometric qualification. A new phase-shifting point diffraction interferometer will be used at Lawrence Berkeley National Laboratory for the measurement and alignment of the MET optic at EUV wavelengths. Using the previous generation of prototype EUV optical systems developed for lithography research, with numerical apertures up to 0.1, EUV interferometers have demonstrated RMS accuracy levels in the 40-70 pm range. Relative to the previous generation of prototype EUV optics, the threefold increase to 0.3 NA in the image-side numerical aperture presents several challenges for the extension of ultra-high-accuracy.

Paper Details

Date Published: 16 June 2003
PDF: 6 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484735
Show Author Affiliations
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Senajith B. Rekawa, Lawrence Berkeley National Lab. (United States)
Keith H. Jackson, Lawrence Berkeley National Lab. (United States)
Erik H. Anderson, Lawrence Berkeley National Lab. (United States)
J. Alexander Liddle, Lawrence Berkeley National Lab. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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