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Proceedings Paper

Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks
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Paper Abstract

The development of defect-free reticle blanks is an important challenge facing the commercialization of extreme ultraviolet lithography (EUVL). The basis of an EUVL reticle are mask blanks consisting of a substrate and a reflective Mo/Si multilayer. Defects on the substrate or defects introduced during multilayer deposition can result in critical phase and amplitude defects. Amplitude- or phase-defect repair techniques are being developed with the goal to repair many of these defects. In this paper we discuss the selection of a capping layer for amplitude-defect repair, and report on experimental results of the reflectance variation over the amplitude-defect repair zone for different capping layers. Our results suggest that carbon and silicon carbide are the leading candidates for capping layer materials. We further performed a quantitative assessment of the yield improvement due to defect repair. We found that amplitude- and phase-defect repair have the potential to significantly improve mask blank yield, and that yield can be maximized by increasing the number of Mo/Si bilayers.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484729
Show Author Affiliations
Stefan P. Hau-Riege, Lawrence Livermore National Lab. (United States)
Anton Barty, Lawrence Livermore National Lab. (United States)
Paul B. Mirkarimi, Lawrence Livermore National Lab. (United States)
Daniel Gorman Stearns, Lawrence Livermore National Lab. (United States)
Henry N. Chapman, Lawrence Livermore National Lab. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
W. Miles Clift, Sandia National Labs. (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Moon-Suk Yi, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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