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Proceedings Paper

Electron-beam-assisted critical dimension reduction
Author(s): Jei-Wei Chang; Chao-Peng Chen; Robert Yang
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Paper Abstract

In this communication, we presented a novel approach to reduce critical dimension of resist features. The proposed method involves two process steps: resist pattern formation and critical dimension reduction. This concept was demonstrated to produce sub-100 nm resist features using negative-tone chemically amplified resist, NEB22A2 and Hitachi-900D electron beam lithography system. Experimental results indicate that the degree of critical dimension reduction can be controlled by the dose of flood electron-beam exposure and second wet developer strength. The theoretical results, based on Monte Carlo simulations, were found to be in qualitatively agreement with our experimental observations.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484681
Show Author Affiliations
Jei-Wei Chang, Headway Technologies, Inc. (United States)
Chao-Peng Chen, Headway Technologies, Inc. (United States)
Robert Yang, Headway Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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