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Proceedings Paper

Nanotechnologies in semiconductor electronics
Author(s): Oleg P. Pchelyakov; Aleksandr I. Toropov; Vladimir P. Popov; A. V. Latyshev; L. V. Litvin; Yury V. Nastaushev; Alexander L. Aseev
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Paper Abstract

The current state of the art and application of technology of molecular beam epitaxy, direct bonding of semiconductor wafers, electron beam lithography and probe nanolithography are reviewed on the base of results of research work carried out at the Institute of Semiconductor Physics (Novosibirsk).

Paper Details

Date Published: 29 July 2002
PDF: 10 pages
Proc. SPIE 4900, Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life, (29 July 2002); doi: 10.1117/12.484564
Show Author Affiliations
Oleg P. Pchelyakov, Institute of Semiconductor Physics (Russia)
Aleksandr I. Toropov, Institute of Semiconductor Physics (Russia)
Vladimir P. Popov, Institute of Semiconductor Physics (Russia)
A. V. Latyshev, Institute of Semiconductor Physics (Russia)
L. V. Litvin, Institute of Semiconductor Physics (Russia)
Yury V. Nastaushev, Institute of Semiconductor Physics (Russia)
Alexander L. Aseev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 4900:
Seventh International Symposium on Laser Metrology Applied to Science, Industry, and Everyday Life
Yuri V. Chugui; Sergei N. Bagayev; Albert Weckenmann; P. Herbert Osanna, Editor(s)

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