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Proceedings Paper

Phase-shift mask in EUV lithography
Author(s): Minoru Sugawara; Akira Chiba; Iwao Nishiyama
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Paper Abstract

The printing of line patterns using an attenuated phase shift mask (PSM) and an alternating PSM was examined through simulations. The attenuated PSM consisted of a bilayer structure, in which multiple interference provides a large latitude for appropriate thicknesses of the absorber and buffer layers. The attenuated PSM provides greater depth of focus (DOF) for sparse lines. The alternating PSM has better aerial-image contrast not only for dense lines but also for isolated lines. An additive structure is proposed for the alternating PSM, which does not require any etching of the glass substrate. Given an appropriate stack of materials, this structure provides a phase shift of 180 degrees and the same reflectance simultaneously. In this study, the printability of 18-nm-wide lines was investigated for an attenuated PSM with annular illumination and an alternating PSM with normal illumination with a small σ of 0.3.

Paper Details

Date Published: 16 June 2003
PDF: 10 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484433
Show Author Affiliations
Minoru Sugawara, Association of Super-Advanced Electronics Technologies (Japan)
Akira Chiba, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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