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Proceedings Paper

Imaging capability of low-energy electron-beam proximity-projection lithography toward the 65/45-nm node
Author(s): Hiroyuki Nakano; Shinichiro Nohdo; Kumiko Oguni; Tomonori Motohashi; Masaki Yoshizawa; Tetsuya Kitagawa; Shigeru Moriya
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Paper Abstract

Imaging capabilities of low-energy electron-beam proximity-projection lithography (LEEPL) are discussed focusing mainly on the hole patterns for chemically amplified resist. LEEPL needs a multi-layer process with a resist layer less than 100 nm thick. To achieve the imaging performance of the 65nm node, we optimized intermediate spin-on-glass layer and top-layer resist, which were selected carefully. 80 nm hole patterns were achieved with 10% exposure latitude, and current imaging position and 45 nm node positions were investigated using σQBP. σQBP was improved from 64.5 nm to 48.9 nm.

Paper Details

Date Published: 16 June 2003
PDF: 11 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.484429
Show Author Affiliations
Hiroyuki Nakano, Sony Corp. (Japan)
Shinichiro Nohdo, Sony Corp. (Japan)
Kumiko Oguni, Sony Corp. (Japan)
Tomonori Motohashi, Sony Corp. (Japan)
Masaki Yoshizawa, Sony Corp. (Japan)
Tetsuya Kitagawa, Sony Corp. (Japan)
Shigeru Moriya, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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