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Proceedings Paper

Relationship between optical property of pattern image and adhesion of resist pattern
Author(s): Junjiro Sakai; Akihiro Nakae; Atsumi Yamaguchi; Kouichirou Tsujita
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Paper Abstract

To get fine patterns of ArF photoresist without pattern collapse, we studied the relation between optical property of pattern image and adhesion of photoresist pattern. In concern of the type of photo mask, we found that using attenuated phase shift mask could make experimental small resolution limit beyond the estimation by simulation. About ARC substrate structure (inorganic ARL/ oxide/ polySi), it was important not only to optimize the reflectivity, but also to optimize the phase of reflectance. Photoresist was easy to collapse when the phase of reflectance at the interface between photoresist and inorganic ARL is near the 0 degree, although the reflectivity was set below 1%. In order to change the phase of reflectance, the film thickness of oxide was varied. In the observation of photoresist profile, bottom profile was changed similar to simulation. In the case of organic bottom ARC, we could not observe the effect of the phase.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483760
Show Author Affiliations
Junjiro Sakai, Mitsubishi Electric Corp. (Japan)
Akihiro Nakae, Mitsubishi Electric Corp. (Japan)
Atsumi Yamaguchi, Mitsubishi Electric Corp. (Japan)
Kouichirou Tsujita, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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