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Proceedings Paper

Effects of alkali treatment on ArF resist process
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Paper Abstract

In ArF (193nm) lithography, severely sloped pattern profiles have been observed particularly in COMA type resists. In using COMA resists that are relatively absorbent, such crude profiles result in obstacles to litho-process reliability and stability. To improve weak profiles, the effects of Alkali Treatment (AT) on the surface of coated ArF resist film are explored because it is expected that Alkali Treatment works as additive quenchers in top area of resist film, and then latent image contrast can be improved consequently. For this experiment, TMAH (2.38wt%) developer was used as alkali solution and two kinds of ArF resist were used with in-house ArF resist (COMA type) and the commercial resist (Acrylate type). An appropriate Alkali Treatment was found to be effective for good profiles without thickness loss in COMA type but not for the Acrylate resist. In this paper, Alkali Treatment effects and process conditions suitable to obtain good patterns as well as considerable process margin (EL, DOF) will be discussed.

Paper Details

Date Published: 12 June 2003
PDF: 9 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483749
Show Author Affiliations
Jin-Soo Kim, Hynix Semiconductor, Inc. (South Korea)
Jae-Chang Jung, Hynix Semiconductor, Inc. (South Korea)
Keun-Kyu Kong, Hynix Semiconductor, Inc. (South Korea)
Hyoung-Ryeun Kim, Hynix Semiconductor, Inc. (South Korea)
Hyeong-Soo Kim, Hynix Semiconductor, Inc. (South Korea)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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