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Proceedings Paper

Ultra fast ion shutter employing a laser-produced plasma
Author(s): Hidehiko Yashiro; Tatsuya Aota; Kentaro Nishigori; Yoshifumi Ueno; Toshihisa Tomie
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Paper Abstract

In order to protect a multilayer mirror from sputtering or ion implantation, high-energy ions ejected from EUV source plasma are to be blocked. We propose use of a laser-produced plasma as an ultra-fast shutter. Ion signal form an ion-source plasma dropped abruptly by two orders of magnitude to a noise level after the shutter plasma generation. The stopping effect for the high-energy ions was observed to reduce as the distance of shutter plasma expansion increases, but the suppression of ions below detection level was observed up to 10 mm. We concluded that reduction of ion signal was caused by in-take of the source plasma flow into the stream of the shutter plasma.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.483745
Show Author Affiliations
Hidehiko Yashiro, National Institute of Advanced Industrial Science and Technology (Japan)
Tatsuya Aota, Japan Society for the Promotion of Science (Japan)
Kentaro Nishigori, National Institute of Advanced Industrieal Science and Technology (Japan)
Yoshifumi Ueno, Association of Super-Advanced Electronics Technologies (Japan)
Toshihisa Tomie, National Institute of Advanced Industrial Science and Technology (Japan)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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