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Proceedings Paper

Proximity effect correction on the multilevel interconnect metal for high-energy electron-beam lithography
Author(s): Shunko Magoshi; Shinji Sato; Kazuo Tawarayama; Yasuhiro Makino; Hiromi Niiyama
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Paper Abstract

In the application of the high-energy electron-beam (e-beam) lithogrpahy to the multi-level interconnect metal; the backscattered electron from the heavy metal previously patterned in lower levels on the substrate causes a significant proximity effect. We estimated the "inter-level" proximity effect in the e-beam exposure with the accelerating voltage of 50kV on some multi-level interconnect metal structures which consist in aluminum wiring and tungsten plugs. It was found that the backscattering range and the backscattering energy ratio to the incident energy depend not only on the density and thickness of metal but also on the distance between the resist and the heavy metal plugs. In this paper, a novel proximity effect correction algorithm is proposed, where the exposing patterns are divided into some classes according to the metal structure, the total backscattering energy deposited in the resist is expressed by the sum of the backscattering energy from each structural class, and the exposrue dose is modulated by the function of the total backscattering energy.

Paper Details

Date Published: 16 June 2003
PDF: 8 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.483741
Show Author Affiliations
Shunko Magoshi, Toshiba Corp. (Japan)
Shinji Sato, Toshiba Corp. (Japan)
Kazuo Tawarayama, Toshiba Corp. (Japan)
Yasuhiro Makino, Toshiba Corp. (Japan)
Hiromi Niiyama, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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