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Proceedings Paper

Nanocomposite resist for low-voltage electron beam lithography (LVEBL)
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Paper Abstract

A novel chemically amplified resist (CAR) was synthesized incorporating a photoacid generating (PAG) moiety, etch resistant nanoparticle, and various acrylated monomers. The addition of acrylated monomers was found to promote good film formation and to improve film adhesion. Directly tethering the nanoparticle into the polymer increases the etch performance of the resist and helps avoid any potential issues with phase separation of components in the resist film. The PAG in these materials is also directly incorporated into the resist backbone. It has been shown that these materials display enhanced sensitivity and contrast using LVEBL. This paper will discuss the material characteristics and lithographic performance of these materials using 2 keV, 10 KeV, and 20 KeV electron beam (EB) exposure. For example, these materials have demonstrated an extremely high sensitivity of only 0.6 μC/cm2 at 2 KeV. Contrast and sensitivity data along with preliminary imaging results will be presented for these materials. Initial imaging results at 20 keV are promising. Achieving similar resolution at low keV also appears to be possible with this material. The trade-off between sensitivity and resolution will also be presented for different electron beam accelerating potentials. Etch resistance and selectivity of this material will also be studied and compared to PHOST and novolac based resists. It will be demonstrated that such materials show great promise for advanced resist applications in a variety of next generation lithography (NGL) applications including electron beam lithography.

Paper Details

Date Published: 12 June 2003
PDF: 11 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483740
Show Author Affiliations
Mohammad Azam Ali, Univ. of North Carolina/Charlotte (United States)
Kenneth E. Gonsalves, Univ. of North Carolina/Charlotte (United States)
Ankur Agrawal, Georgia Institute of Technology (United States)
Augustin Jeyakumar, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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