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Proceedings Paper

Intel benchmarking and process integration of 157-nm resists
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Paper Abstract

Intel’s recent 157nm fluoropolymer photoresist development is described, including the benchmarking of photoresist patterning and the suitability of resists in typical Intel etch processes. The imaging results show that the new ultra-low absorbance resists (absorbance <1/μm) show great promise for meeting the 65nm-node ITRS targets. The materials also show good etch resistance when exposed to SiO2, Si3N4 and SixOyNz dry etch chemistries.

Paper Details

Date Published: 12 June 2003
PDF: 8 pages
Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483730
Show Author Affiliations
James M. Powers, Intel Corp. (United States)
Jeanette M. Roberts, Intel Corp. (United States)
Paul A. Zimmerman, International SEMATECH (United States)
Robert P. Meagley, Intel Corp. (United States)
E. Steve Putna, Intel Corp. (United States)
Uday Shah, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5039:
Advances in Resist Technology and Processing XX
Theodore H. Fedynyshyn, Editor(s)

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