Share Email Print
cover

Proceedings Paper

CMP and self-shadowing effect of overlay mark in metal sputtering process
Author(s): Se-Jin Park; Hong-Rae Kim; Yong-Suk Lee; Won-Sik Yang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Overlay mismatch of pre/post etch on metal layer is caused by asymmetric metal deposition on overlay mark. The major components of the mismatch are known to be composed of wafer scale and rotation caused by self-shadowing effect and CMP process, respectively. The behavior of each component was observed according to the changes in overlay mark shapes, metal thickness and CMP process conditions in this study. The overlay difference according to metal overhang on overlay mark was also investigated. It was found that overlay mismatch was reduced when the metal overhang on overlay mark happens, and over-polishing overlay mark during W CMP prevents formation of the metal overhang and increases wafer scale mismatch.

Paper Details

Date Published: 2 June 2003
PDF: 5 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483660
Show Author Affiliations
Se-Jin Park, Dongbu Electronics Co., Ltd. (South Korea)
Hong-Rae Kim, Dongbu Electronics Co., Ltd. (South Korea)
Yong-Suk Lee, Dongbu Electronics Co., Ltd. (South Korea)
Won-Sik Yang, Dongbu Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

© SPIE. Terms of Use
Back to Top