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Proceedings Paper

Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display
Author(s): Hiroshi Amano; Motoaki Iwaya; Shugo Nitta; Y. Tomida; K. Iida; T. Kawashima; S. Fukui; Satoshi Kamiyama; Isamu Akasaki; H. Kinoshita; T. Matsuda; S. Otani
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Paper Abstract

A new candidate for the lattice-matched metallic substrate, i.e. ZrB2, for the growth of group-III nitrides is proposed. A low-temperature-deposited-buffer layer is found to be essential for the growth of GaN on ZrB2. Highly luminescent violet-light-emitting diodes fabricated on ZrB2 perform as well as or even superior to those fabricated on sapphire. ZrB2 is easily etched by the solution of HF and HNO3. Fabrication of a nitride-based flexible display is expected using a thin free-standing GaN film.

Paper Details

Date Published: 25 July 2003
PDF: 5 pages
Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.483614
Show Author Affiliations
Hiroshi Amano, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Shugo Nitta, Meijo Univ. (Japan)
Y. Tomida, Meijo Univ. (Japan)
K. Iida, Meijo Univ. (Japan)
T. Kawashima, Meijo Univ. (Japan)
S. Fukui, Meijo Univ. (Japan)
Satoshi Kamiyama, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)
H. Kinoshita, Kyocera Corp. (Japan)
T. Matsuda, Kyocera Corp. (Japan)
S. Otani, National Institute for Materials Science (Japan)


Published in SPIE Proceedings Vol. 4986:
Physics and Simulation of Optoelectronic Devices XI
Marek Osinski; Hiroshi Amano; Peter Blood, Editor(s)

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