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Proceedings Paper

Simultaneous dose and focus monitoring on product wafers
Author(s): Brad J. Eichelberger; Berta Dinu; H. Pedut
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Paper Abstract

As the design rules shrink below 130nm it will become increasingly important to monitor and control focus and dose in-line, on product wafers to maintain the ever-decreasing process window. On process layers today, it is not uncommon to see focus related errors equaling between 50-100nm in magnitude. Today these errors go undetected and CD changes are typically corrected by making a dose correction to the exposure tool. However, corrections using dose can lead to significantly smaller process latitude and therefore, products out of spec. Using a technique that was first developed by Christopher Ausschnitt at IBM Microelectronics it is possible to monitor focus and dose on production layers with a single compact target. Extending this technology on an advanced optical tool allows for precise measurements of focus and dose errors. This paper will describe the methodology of inline focus and dose monitoring using this technique on 130nm process technology with an outlook on the expectations for future nodes. Results, including focus and dose sensitivity from multiple process steps on production wafers will be shown.

Paper Details

Date Published: 2 June 2003
PDF: 8 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483473
Show Author Affiliations
Brad J. Eichelberger, KLA-Tencor Corp. (United States)
Berta Dinu, KLA-Tencor Corp. (Israel)
H. Pedut, KLA-Tencor Corp. (Israel)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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