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Proceedings Paper

Low-temperature operation of silicon drift detectors
Author(s): Timothy J. Sumner; S. Roe; G. K. Rochester; G. Hall; Per Evensen; B. S. Avset
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Paper Abstract

Two types of drift device, namely photodiodes and position sensitive drift chambers with segmented anode and cathode structures, have been studied at room temperature and below. Leakage current and electron mobility have been investigated at low temperature for the drift photodiodes. Self-triggering has been achieved for the position sensitive drift chambers using 60 keV photons, and differences in arrival time between the prompt trigger signal from the cathode and the delayed anode signal have been studied as a function of drift distance and temperature. The response of the photodiodes when coupled to a CsI scintillator at room temperature has been assessed.

Paper Details

Date Published: 1 October 1991
PDF: 9 pages
Proc. SPIE 1549, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy II, (1 October 1991); doi: 10.1117/12.48344
Show Author Affiliations
Timothy J. Sumner, Imperial College of Science, Technology and Medicine (United Kingdom)
S. Roe, Imperial College of Science, Technology and Medicine (United Kingdom)
G. K. Rochester, Imperial College of Science, Technology and Medicine (United Kingdom)
G. Hall, Imperial College of Science, Technology and Medicine (United Kingdom)
Per Evensen, Senter for Industriforskning (Norway)
B. S. Avset, Senter for Industriforskning (Norway)


Published in SPIE Proceedings Vol. 1549:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy II
Oswald H. W. Siegmund; Richard E. Rothschild, Editor(s)

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